PURPOSE: To change the electrical resistivity of a zinc oxide film without heating a substrate by changing the numbers of the zinc oxide atoms and oxygen ions reaching the substrate when a film is formed and an accelerating energy of irradiation ion.
CONSTITUTION: A substance 3' consisting of zinc oxide, for example, is vacuum- deposited on a substrate 1 from a vaporization source 3, and the substrate 1 is irradiated with an ion 4' simultaneously, alternately or after deposition. An accelerating energy of 0.5-10keV is used, and a filament is heated as the ion source to produce plasma. An oxygen-Ar mixture is used as the gas, and the mixing ratio is adjusted in consideration of the sputtering rate of the zinc oxide film to be deposited on the substrate 1, the accelerating energy of the irradiating ion and the numbers of the zinc oxide atoms and oxygen ions reaching the substrate 1 when the film is formed are controlled, and the resistivity of the zinc oxide film is changed from low to high.
Kiyoshi Ogata
Nishiyama Satoshi
Akinori Ebe
Naoto Kurutani
