PURPOSE: To attain quick and precise exposure, by arranging a dichroic mirror transmitting exposed light having main wavelength and reflecting arraignment light between a reticle and a projection objective lens.
CONSTITUTION: With respect to the projection objective lens, the dichroic mirror M having the size enough to cover an exposed light passing area is arranged between the reticle R and the projection objective lens L0 in parallel with the reticle R. Alignment light flux is reflected by the dichroic mirror and taken out from the exposed light passing area. When an wafer W is located on a position for exposure, the alignment can be performed by detecting the most end part of the exposure are of the wafer W or a key mark Wa formed on the slight inside, so that it is unnecessary to move the wafer W after completing the alignment and rapid and precise exposure is performed.
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SUWA KIYOUICHI
MATSUURA TOSHIO
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