Title:
PROTECTION CIRCUIT FOR C-MOS IC
Document Type and Number:
Japanese Patent JPS52128081
Kind Code:
A
Abstract:
PURPOSE: To prevent IC breakdown by providing the clamp circuit consisting of PNP transistor and NPN transistor which form the bypass route between the drain and source of the input terminal of C-MOS.IC.
Inventors:
HAYASHI FUSAO
Application Number:
JP4448976A
Publication Date:
October 27, 1977
Filing Date:
April 21, 1976
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H02H7/20; H01L21/8238; H01L27/02; H01L27/092; H01L29/78; (IPC1-7): H01L27/04; H01L29/78; H02H7/20