To provide a protective circuit of a semiconductor device capable of miniaturizing the semiconductor device and improving electrostatic discharge resistance compatibly.

In the protective circuit 23, since a Pch protective circuit 21 and an Nch protective circuit 22 are formed by individually forming a Pch protective diode 14 at the lower part of a bonding pad 16 for Pch protection and an Nch protective diode 15 at the lower part of a bonding pad 17 for Nch protection, a non-operating protective circuit is not formed at the lower part of the respective bonding pads. Thus, an area occupied by the protective circuit 23 is reduced to contribute to the miniaturization of the semiconductor device 10. Since an area at the lower part of the respective bonding pads is effectively utilized, the formation area of the Pch protective diode 14 and the Nch protective diode 15 can be increased and thus the electrostatic discharge resistance can be improved.