Title:
PLASMA TREATING DEVICE
Document Type and Number:
Japanese Patent JP3164188
Kind Code:
B2
Abstract:
PURPOSE: To enhance a plasma treating device in uniformity of etching rate by a method wherein a gas buffer chamber is provided inside an electrode means, and holes which jet out gas against a specimen holder from a gas buffer chamber are provided to the face of the electrode means which confronts the specimen holder.
CONSTITUTION: Microwaves are introduced into a reaction chamber 41 through a microwave inlet window 45 and a microwave transmission hole 12. A gas inlet 11b connected to a gas feed pipe 48 is provided to the side center of a metal plate 11, and a large number of small holes 13 prescribed in diameter are provided to the surface of the plate 11, so that gas fed from the gas feed pipe 48 is reserved in a gas buffer chamber 11a once and then jetted out against the treating surface of a specimen S through the small holes 13. Gas can be jetted out uniformly and vertically against the treating surface of the specimen S. By this setup, a plasma treating device of this constitution can be improved in uniformity of etching rate, selection ratio, and treatment.
Inventors:
Kyoichi Komachi
Kenji Akimoto
Kenji Akimoto
Application Number:
JP13203194A
Publication Date:
May 08, 2001
Filing Date:
June 14, 1994
Export Citation:
Assignee:
NEC
SUMITOMO METAL INDUSTRIES,LTD.
SUMITOMO METAL INDUSTRIES,LTD.
International Classes:
H05H1/46; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP63263725A | ||||
| JP1120810A | ||||
| JP6104098A |
Attorney, Agent or Firm:
Ryuji Inouchi