Title:
PROXIMITY EFFECT CORRECTING METHOD AND RETICLE FOR CORRECTION USED THEREFOR
Document Type and Number:
Japanese Patent JPH11186151
Kind Code:
A
Abstract:
To improve lithography precision of a fine pattern by adequately correcting proximity effect even in the peripheral part of a chip region, when the acceleration voltage of an electron beam for pattern formation is increased.
A photo-sensitive substrate 18 is irradiated with an electron beam for correction through a reticle for correction, and proximity effect caused by irradiation of an electron beam for pattern formation to a region 23 in a chip region 21 on the substrate 18 is corrected. Not only a region 24 in the chip region 21 but also a peripheral region 22 outside the chip region 21 on the substrate 18 are irradiated with the electron beam for correction.
Inventors:
KAWAMURA YUKISATO
Application Number:
JP36421097A
Publication Date:
July 09, 1999
Filing Date:
December 16, 1997
Export Citation:
Assignee:
NIKON CORP
International Classes:
G03F1/20; G03F7/20; H01L21/027; (IPC1-7): H01L21/027; G03F1/16; G03F7/20
Attorney, Agent or Firm:
Shinomiya Dori