Title:
LAMINATE CRUCIBLE FOR PRODUCING SILICON INGOT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3206540
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To produce a crack-free silicon ingot by employing a laminate structure of an inner silica layer including at least one layer of fine fused silica sand, and an outer silica layer including at least one layer of coarse fused silica sand of specified size.
SOLUTION: The laminate crucible 5 suitable for producing a crack-free silicon ingot has a laminate structure of an inner silica layer 3 including at least one layer of fine fused silica sand 31 of 50-300 μm bonded through silica, and an outer silica layer 4 including at least one layer of coarse fused silica sand of 500-1500 μm bonded through silica. Inner space of the laminate crucible 5 has wall face tapered such that the opening area increases over the bottom area from the bottom toward the opening. Consequently, internal stress of silicon ingot is reduced and cross-sectional area of solidification interface is widened thus accelerating coarsening of grain size.
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Inventors:
Saburo Wakita
Mitsuhashi Akira
Junichi Sasaki
Mitsuhashi Akira
Junichi Sasaki
Application Number:
JP4546098A
Publication Date:
September 10, 2001
Filing Date:
February 26, 1998
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
F27B14/10; H01L31/04; (IPC1-7): F27B14/10; H01L31/04
Attorney, Agent or Firm:
Kazuo Tomita (1 person outside)