PURPOSE: To speed up pulse signals with respect to a new pulse generation circuit suitable for an address transient detection circuit and the semiconductor device with the same.

CONSTITUTION: A pair of different conductive electric field effect transistors Q and R where gates are commonly connected and source drain paths are serially connected each other to form a serial current path 1, and a constant current source one end of which is connected to one power supply line Vee or resistance element CS are provided. The other end of the constant current source or the resistance element CS and one end of the serial current path 1 are connected, and the commonly connected gates is turned to an input terminal IN, and one end of the serial current path 1 is turned to an output terminal OUT.