PVD SYSTEM BASED ON ION EXTRACTION FROM PLASMA

Japanese Patent JPH07183219

A

PURPOSE: To provide a physical evaporation source having improved straightness for evaporating a metal layer on a semiconductor wafer, by providing a magnetron sputtering device constituted by specified high-intensity plasma inducing means and specified ion extracting means. CONSTITUTION: In a particle confinement container 2 having an aperture and a wall, the wall has inner side surfaces 5, 5' of a target material, and a sputtering cathode having means for applying a voltage and means for supplying and maintaining electrons in the container 2 are included. Also, high-intensity inducing means which includes magnetic field generating means 4, 4' for supplying a blank magnetic field 1 to a region near the aperture of the container 2 and generating a magnetic line of force 3 looping through the wall and supplying a coercive force for holding electrons near the wall is provided. In addition, ion extracting means for causing the zero-value magnetic field region 1 to cooperate with ions in the vicinity thereof to induce ions so that ions move away from the container 2 and follow a predetermined route is provided in a magnetron sputtering device.

JPS58120549

【考案の名称】磁石内蔵型マグネトロン

JIYON SHII HERUMAA
KUOKU FUAI RAI
ROBAATO ERU ANDAASON

JP27170194A

July 21, 1995

October 11, 1994

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VARIAN ASSOCIATES

H01J23/10; H01J37/34; H01L21/203; H01L21/285; C23C14/35; (IPC1-7): H01L21/203; C23C14/35; H01J23/10; H01L21/31

JPH05102036A	1993-04-23
JPS6188511A	1986-05-06
JPS6046368A	1985-03-13
JPH062125A	1994-01-11
JPH06172995A	1994-06-21
JPH06200375A	1994-07-19

Sumio Takeuchi (1 outside)

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