To provide a method for manufacturing a pyroelectric detection element with reduced damage by etching.
A method for manufacturing a pyroelectric detection element comprises: a first film formation step of forming and patterning a Sn film 271; a second film formation step of forming an In film 272 placed on the Sn film 271; a third film formation step of forming a pyroelectric material 232; an annealing step of heating the Sn film 271 and the In film 272 in an atmosphere including oxygen and forming a first electrode 234 from the Sn film 271 and the In film 272; and a removal step of removing the In film 272 and the pyroelectric material 232 in a place where the first electrode 234 is not formed. An InSn lamination area 273 with the In film 272 and the Sn film 271 laminated and an In monolayer area 274 where the In film 272 and the Sn film 271 are not laminated are disposed on a support member 210 when completing the second film formation step; the first electrode 234 is formed in the InSn lamination area 273 at the annealing step, and the In film 272 in the In monolayer area 274 is evaporated.
Osamu Suzawa
Kazuhiko Miyasaka