Title:
PYROELECTRIC THIN FILM DEVICE AND ITS PREPARATION
Document Type and Number:
Japanese Patent JPH07307496
Kind Code:
A
Abstract:
PURPOSE: To provide an element having an improved sensitivity and performance of a sensor by epitaxially growing a lower electrode and pyroelectric thin film on the (111) plane of an Si substrate having a thin film structure at the back side with an insulation film, lower electrode, pyroelectric film, upper electrode and upper electrode pad formed on the substrate. CONSTITUTION: The element comprises a substrate 31 having a thin film structure at the back side on the (111) plane, insulation film 32 formed on the front side of the substrate 31, lower electrode 33 formed on the film 32, pyroelectric film 34 formed on the electrode 33, infrared absorbing upper electrode formed on the film 34, and upper pad 36 formed on the one side top of the electrode 35 and top of the film 32. The lower electrode 33 is a Pt film epitaxially grown on the (111) plane and the pyroelectric film 34 is a Pb1-x Lax (Zr0.8 Ti0.2 )O3 (x=0-0.1) thin film epitaxially grown on the (111) plane.
Inventors:
RI TONKI
Application Number:
JP3538595A
Publication Date:
November 21, 1995
Filing Date:
February 23, 1995
Export Citation:
Assignee:
GOLD STAR CO
International Classes:
G01J1/02; G01N27/00; H01L37/02; (IPC1-7): H01L37/02; G01J1/02
Attorney, Agent or Firm:
Kazuo Sato (3 others)
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