Title:
PYROGENIC BORON NITRIDE AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JPH0442897
Kind Code:
A
Abstract:
PURPOSE:To obtain the title boron nitride with higher developmental degree of laminar structure, thus suitable as a material for the crucibles to be used in pulling compound semiconductor single crystal by reaction between a boron halide, alkyl borate and ammonia under specified conditions. CONSTITUTION:The objective boron nitride >=1000 in crystal orientation degree can be obtained by the following processes; a reaction is carried out at >=1600 deg.C under a pressure of <=50Torr between a boron halide, an alkyl borate and ammonia. The boron halide is e.g. boron trichloride, boron trifluoride. The alkyl borate is e.g. methyl borate, ethyl borate. The molar ratios for alkyl borate and ammonia are such as to be (0.1-1.0):(2-10) per mol of the boron halide, respectively.
Inventors:
KUBOTA YOSHIHIRO
HARADA KESAJI
KAWADA ATSUO
ITO KENJI
HARADA KESAJI
KAWADA ATSUO
ITO KENJI
Application Number:
JP14593190A
Publication Date:
February 13, 1992
Filing Date:
June 04, 1990
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C01B21/064; C23C16/34; C30B15/10; C30B29/38; (IPC1-7): C01B21/064; C23C16/34; C30B15/10; C30B29/38
Attorney, Agent or Firm:
Ryoichi Yamamoto (1 person outside)
Next Patent: JPH0442898