Title:
PZT THIN FILM FOR FERROELECTRIC CAPACITOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3034181
Kind Code:
B2
Abstract:
PURPOSE: To improve the fatigue phenomena of a PZT thin film and improve its durability by doping its PZT ferroelectric with a donor element and an acceptor element simultaneously.
CONSTITUTION: A PZT (PbZr1-xTixO3) ferroelectric is doped with a donor element and an acceptor element simultaneously to suppress influences resulting from charge disproportion and to improve the fatigue characteristic and leakage current characteristic of a PZT thin film simultaneously. The donor element is typically Nb (+5) or Ta (+5), and the acceptor element is typically Sc (+3), Mg (+2) or Zn (+2). That doping of an appropriate combination of elements has an advantageous effect of improving the structure of PZT and avoids depletion caused by charge disproportion between the donor and the acceptor. The doped PZT thin film thus manufactured in such procedures has limited small leakage currents and improved durability.
Inventors:
Lee Wan-in
Lee Shun
Zheng Yi
Zheng Jiyuan
Torataka Yanagi
Lee Shun
Zheng Yi
Zheng Jiyuan
Torataka Yanagi
Application Number:
JP7200395A
Publication Date:
April 17, 2000
Filing Date:
March 29, 1995
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01B3/00; H01B3/12; H01G4/12; H01G7/06; C04B35/46; H01L21/316; H01L21/02; H01L21/314; (IPC1-7): H01B3/00; C04B35/46; H01B3/12; H01G4/12; H01G7/06
Domestic Patent References:
| JP449721B2 | ||||
| JP4642544B2 | ||||
| JP4502303A |
Attorney, Agent or Firm:
Yutaka Koshio