量子メモリ

Japanese Patent JP5526200

B2

A quantum memory component including a quantum dot molecule having first and second quantum dots provided in respective first and second layers separated by a barrier layer; an exciton comprising an electron and hole bound state in said quantum dot molecule, the spin state of said exciton forming a qubit; first and second electrical contacts respectively provided below the first quantum dot and above the second quantum dot; a voltage source to apply an electric field across said quantum dot molecule; a controller to modulate the electric field across the quantum dot molecule, including an information acquiring circuit to acquire information concerning the relationship between fine structure splitting of the exciton and the applied electric field and a timing circuit to allow switching of the exciton from an indirect configuration to a direct configuration at predetermined times derived from the fine structure splitting.

JP7304362	Devices, systems, and methods that facilitate the buffering, storage, and communication of ambient temperature quantum information
JPH07107591	[Title of Invention] Optical Information Storage Circuit

Niklas Adam Bilbo Skelld
Antony John Bennett
Andrew James Shields

JP2012189828A

June 18, 2014

August 30, 2012

Click for automatic bibliography generation  

Toshiba Corporation

G02F3/00

JP2011209725A
JP2007335503A

Kurata Masatoshi
Yoshihiro Fukuhara
Makoto Nakamura
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Takao Ako
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi

Previous Patent: JPS5526199

Next Patent: UNDRAWN CONTINUOUS THERMOPLASTIC POLYMER FILAMENT YARN AND ITS PRODUCTION