QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE SILICON CRYSTAL AND ITS PRODUCTION

Title:

QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE SILICON CRYSTAL AND ITS PRODUCTION

Document Type and Number:

Japanese Patent JP2000072589

Kind Code:

A

Abstract:

To provide a quartz glass crucible used for pulling a single quartz crystal, making it possible to pull the single quartz crystal having a high single crystallization rate and capable of improving stability for pulling the single silicon crystal, and to provide a method for producing the quartz glass crucible.

This quartz glass crucible for pulling a single quartz crystal comprises a semi-transparent glass layer crucible substrate and a transparent quartz glass layer formed on the inner wall surface of the crucible substrate. Therein, the quartz glass crucible has a rough surface area of ≤15% and/or devitrified spots of ≤2 spots/cm2 on the inner surface of the quartz glass crucible.

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Inventors:

SATO TATSUHIRO
WATANABE HIROYUKI
IWATANI FUJIO

Application Number:

JP24593098A

Publication Date:

March 07, 2000

Filing Date:

August 31, 1998

Export Citation:

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Assignee:

SHINETSU QUARTZ PROD

International Classes:

C03B20/00; C03B19/09; C30B15/12; C30B29/06; (IPC1-7): C30B15/12; C03B20/00; C30B29/06

Attorney, Agent or Firm:

Shoji Ishihara

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