RADIATION DETECTING ELEMENT AND JOSEPHSON ELEMENT

Japanese Patent JPH03174781

A

PURPOSE:To provide a large area for a superconductor and to improve the detecting efficiency of photons by providing a thin part and a thick part which are formed of insulators or semiconductors having specified thicknesses, distributing the thin part discontinuously or continuously and uniformly in the entire tunnel barrier layer, and making the total area of the thin part smaller than the total area of the thick part. CONSTITUTION:A tunnel barrier layer 13 is arranged at the junction surface between a superconductor 11 which is to become a lower electrode and a superconductor 12 which is to become a counter electrode. A part of the tunnel barrier layer is made to be a thin part 14 which is formed of an insulator having the thickness of 5-100Angstrom or a semiconductor having the thickness of 5-1,000Angstrom , and the other part of the tunnel barrier layer is made to be a thick part 15 which is formed of an insulator or a semiconductor having the thickness that is twice or more that of the thin part. The thin part 14 is distributed into the entire tunnel barrier layer uniformly. The total area of the thin part 14 is made smaller than the total area of the thick part 15. Therefore, the increase in capacitance due to the increase in the planar area of the element can be suppressed. Thus, the detected signal does not become small even if the area of the superconductor is made large, and the detecting efficiency of photons can be improved.

KURAKADO MASAHIKO
MATSUMURA ATSUKI
KAMINAGA TAKESHI
TAKAHASHI TORU

JP33138689A

July 29, 1991

December 22, 1989

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NIPPON STEEL CORP

G01T1/24; H01L39/10; H01L39/22; H01L39/24; (IPC1-7): G01T1/24; H01L39/22; H01L39/24

JPS61271487A	1986-12-01
JPS58209177A	1983-12-06
JPS63102383A	1988-05-07

Mikio Hatta (1 outside)

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