Title:
RAPID THERMAL PROCESSING REACTOR FOR PROCESSING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP3859226
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a rapid thermal processing reactor which can handle wafers of multiple sizes and can heat them to an almost uniform temperature in the process.
SOLUTION: A rapid thermal processing (RTP) reactor 300 uses one or two heat sources 310 to process multiple wafers 311 and 312 or a single large wafer. The single wafer is or the multiple wafers 311 and 312 are placed on a rotatable susceptor 302 supported by a susceptor support 304. A susceptor control unit rotates the wafers 311 and 312 in the process, and raises/lowers the susceptor 302 at various positions where the wafers 311 and 312 are loaded and processed. A thermal control unit controls the one or two heat sources which heat the wafers to an almost uniform temperature in the process. A gas flow control unit controls gas flow into a reaction chamber.
Inventors:
Moore, Gary M
Nishikawa, Katsuhito
Nishikawa, Katsuhito
Application Number:
JP2004154897A
Publication Date:
December 20, 2006
Filing Date:
May 25, 2004
Export Citation:
Assignee:
Moore Epitaxial, Inc.
International Classes:
C23C16/44; H01L21/683; C23C16/455; C23C16/458; C23C16/46; C23C16/48; C23C16/54; C30B25/02; C30B25/10; C30B25/12; C30B25/14; C30B31/12; C30B31/14; F27B5/04; F27B5/14; F27B5/16; F27B5/18; F27D11/00; F27D11/02; H01L21/00; H01L21/205; H01L21/22; H01L21/26; H01L21/324; H01L21/687; H05B3/00; (IPC1-7): H01L21/68; C23C16/44; H01L21/205; H01L21/26
Domestic Patent References:
| JP631044A | ||||
| JP456146A |
Attorney, Agent or Firm:
Yoichi Oshima
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