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Title:
RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING HETEROGENEOUS DINUCLEAR COMPLEX, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION
Document Type and Number:
Japanese Patent JP2016211049
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition capable of forming a thin film comprising a composite metal by one time deposition at a low temperature (approximately 200°C).SOLUTION: There is provided a raw material for chemical vapor deposition shown by the following formula, and comprising a heterogeneous dinuclear complex in which cyclopentadienyl or carbonyl is coordinated to a first transition metal and a second transition metal which are central metals. The first transition metal (M) and the second transition metal (M) are mutually different. The cyclopentadienyl (L) is 1 or 2, and H or an alkyl group of C1-5 is coordinated thereto each independently as a substituent group R-R.SELECTED DRAWING: Figure 2

Inventors:
HARADA RYOSUKE
SHIGETOMI TOSHIYUKI
NABEYA SHUNICHI
SUZUKI KAZUHARU
KUMAKURA AKIKO
AOYAMA TATSUKI
SONE TAKAYUKI
Application Number:
JP2015096981A
Publication Date:
December 15, 2016
Filing Date:
May 12, 2015
Export Citation:
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Assignee:
TANAKA PRECIOUS METAL IND
International Classes:
C23C16/06; C07F13/00; C07F15/00; C07F15/02; C07F15/06; C07F17/00; C07F19/00; C23C16/18
Domestic Patent References:
JP2006328526A2006-12-07
JP2006328526A2006-12-07
Foreign References:
US5171610A1992-12-15
Other References:
JPN6016026989; LIU David K.: 'Photochemical vapor deposition of mixed-metal thin films from organometallic precursors containing h' Materials Letters Vol. 10 number 7, 8, 199101, P. 318-322
JPN6016026988; SHYU Shin-Guang: 'Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor' Chemical Communications , 1996, P. 2239-2240
Attorney, Agent or Firm:
Patent business corporation Tanaka, Okazaki and Associates