Title:
REACTION CONTAINER FOR THIN FILM DEPOSITION
Document Type and Number:
Japanese Patent JP3816920
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a reaction container for a thin film deposition which can effectively deposit the thin film, whose high purity, an excellent electric characteristic, and a step coverage are realized, on a wafer by using a plurality of reactive gases.
SOLUTION: A distributing block 52 distributes a first reactive gas into a plurality of the first reactive gas flows equally, and the first reactive gas flows are supplied to a shower block 60 through a plurality of first transferring tubes 53 located symmetrically. Between the upper diffusion block 70 and middle diffusion block 80 of the shower block, the first reactive gas flows from a plurality of first and second main flow paths, which are formed radially and symmetrically, and from a plurality of first and second subflow paths associated with the main flow path diverged at a right angle, and they are uniformly jetted from a plurality of first jet holes 93.
More Like This:
Inventors:
Zhao Tatong
Root
Hiroshi Hayashi
Akira Shotora
Lee Sou
Kei
Root
Hiroshi Hayashi
Akira Shotora
Lee Sou
Kei
Application Number:
JP2003432051A
Publication Date:
August 30, 2006
Filing Date:
December 26, 2003
Export Citation:
Assignee:
IPS Ltd.
International Classes:
H01L21/20; H01L21/205; C23C16/455; C23C16/44; (IPC1-7): H01L21/205; C23C16/455
Domestic Patent References:
| JP8291385A | ||||
| JP2001323377A |
Foreign References:
| WO2002048427A1 |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda
Previous Patent: WOODEN FRAMEWORK, IMPROVED JOINING METHOD, AND JOINING HARDWARE
Next Patent: アンジオテンシン変換酵素阻害作用を有する新規ペプチド
Next Patent: アンジオテンシン変換酵素阻害作用を有する新規ペプチド