Title:
REACTIVE ION ETCHING APPARATUS
Document Type and Number:
Japanese Patent JPH01202821
Kind Code:
A
Abstract:
PURPOSE: To reduce an irregularity in an etching rate by engaging a plurality of supporting bases for placing semiconductor wafers with a cathode plate, and separately rotating the bases in cooperation with the rotation of the plate.
CONSTITUTION: A plurality of supporting bases 4 for placing semiconductor wafers are engaged with a cathode plate 3, and separately rotated through gears 5, 6 in cooperation with the rotation of the plate 3. Thus, in order to reduce an irregularity in the etching rate of the wafers due to the difference of a plasma state in a vacuum vessel 1 and the flows of etching gas, the plate 3 is rotated, and the bases 4 are additionally rotated. In this manner, the irregularity in the etching rates can be reduced.
Inventors:
ONO YASUYUKI
Application Number:
JP2800688A
Publication Date:
August 15, 1989
Filing Date:
February 08, 1988
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Uchihara Shin