Title:
REACTIVE ION ETCHING PROCESS
Document Type and Number:
Japanese Patent JPS61295293
Kind Code:
A
Abstract:
An etch gas consisting of SF6, a noble gas and a small percentage of a carbon-containing gas is used in a reactive ion etching process for etching a ceramic partially masked by an organic photoresist.
Inventors:
JIYAKURIN KEI BIANCHI
ROBAATO ANSONII GUDEYURA
DENISU JIYON RANJI
ROBAATO ANSONII GUDEYURA
DENISU JIYON RANJI
Application Number:
JP7685486A
Publication Date:
December 26, 1986
Filing Date:
April 04, 1986
Export Citation:
Assignee:
IBM
International Classes:
C04B41/53; C04B41/91; H01L21/311; (IPC1-7): C04B41/91
Attorney, Agent or Firm:
Jiro Yamamoto
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