Title:
READ-ONLY MEMORY AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3484380
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a read-only memory which does not require a particular ion implantation process for only writing data.
SOLUTION: A current, which flows to word lines 15 used to connect a plurality of memory cells 17 which is arranged on a semiconductor substrate 11 and to bit lines 14 of the memory cells 17 selected by the bit lines 14, is detected. Thereby, this read-only memory determines which of binary the memory contents stored in the respective memory cells is. The memory cells 17 as a group are composed of field-effect transistors 17a, which hold a continuity state in a nonslection state and which cut off the continuity state in a selection state, so as to correspond to the respective memory contents. The memory cells as the group are composed of continuity parts 17b, which hold a continuity state irrespective a selection state or a nonslection state.
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Inventors:
Hiroshi Mizuhashi
Teruo Kato
Teruo Kato
Application Number:
JP26828999A
Publication Date:
January 06, 2004
Filing Date:
September 22, 1999
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L27/10; G11C17/12; H01L21/8247; H01L27/115; (IPC1-7): H01L27/10; H01L21/8247; H01L27/115
Domestic Patent References:
| JP1116365A |
Attorney, Agent or Firm:
Yukio Sato