PURPOSE: To use an element for the memory element of thin film EL element over a wide range making its structure into three layers of a dielectric layer, fluorescent layer and dielectric layer, by writing data by an electron beam, and by readng data by applying a voltage to stored information.
CONSTITUTION: This device is composed of three layers of dielectric layer 3, fluorescent layer 4 and dielectric layer 5 and has hysteresis characteristics between an applied voltage and luminance, and a couple of electrodes are made to correspond to any point of the thin-film EL element, thereby attaining its reading and writing. Here, focusing electromagnetic coil 138 and XY-directional deflecting coil 137 are provided to the position which confronts to the element arranged, and the writing is done by deflecting and controlling an electron beam from electron-beam generating circuit 139. Synchronism detection circuit 213, on the other hand, sends out read signal 214 by receiving a signal with constant rise gradient equal to a maintenance voltage through read-out waveform application device 210. Consequently, the range of use as the memory element of a thin-film EL element can be expanded
OOBA TOSHIHIRO
SUZUKI CHIYUUJI
KOBA MASAYOSHI
KUDOU ATSUSHI
