Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3200858
Kind Code:
B2
Abstract:
PURPOSE: To from a flattened insulating film having small foundation dependance, good quality and stability also in case where an insulating film is formed by the reaction of an organic silicon group compound and ozone.
CONSTITUTION: A flattened insulating film 4 can be obtained by performing plasma treatment on a thermooxide film 3 on a substrate 1 having difference in level 2 by nitrogen group gas, or by the reaction of an organic silicon group compound to ozone while forming an insulating film containing impurities on the thermooxide film 3.
Inventors:
Masakazu Muroyama
Application Number:
JP5587291A
Publication Date:
August 20, 2001
Filing Date:
February 27, 1991
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/31; H01L21/312; H01L21/316; (IPC1-7): H01L21/316
Domestic Patent References:
| JP719777B2 | ||||
| JP680657B2 | ||||
| JP810692B2 |
Attorney, Agent or Firm:
Toru Takatsuki