To provide a recess gate which can reduce the height of a recess gate without generating voids in the vapor deposition of a gate electrode substance to be buried in a recess, and to provide a method for manufacturing a semiconductor device equipped with the same.

The recess gate contains a silicon substrate, a recess pattern formed by having a predetermined depth in the predetermined part of the silicon substrate, a gate insulating film formed on the surface of the recess pattern, a gate poly-silicon film formed on the surface of the gate insulating film, a gate metal film formed on the surface of the gate poly-silicon film and formed so as to bury the recess pattern, and a gate hard mask formed on the gate metal film.