Title:
RECHARGE TUBE, AND PRODUCTION METHOD OF SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2018090432
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a recharge tube capable of reducing contamination in raw material melt derived from a wire metal without damaging flexibility of a wire in recharging, and to provide a production method of a silicon single crystal.SOLUTION: A raw material loaded in a quartz crucible is melted by a heater to make raw material melt from which a silicon single crystal is drawn up in a chamber of a production apparatus of a single crystal. A recharge tube is used to load the raw material into the quartz crucible in the production apparatus. The recharge tube includes a cylindrical quartz body to house the raw material, a conic valve located at the bottom edge of the cylindrical body, a metallic wire to hang and support the conic valve, and a plurality of quartz tubes of a length (L) of 30 mm or more to cover the metallic wire at least in a region where the raw material is housed, to prevent the metallic wire from contacting the raw material housed in the cylindrical body.SELECTED DRAWING: Figure 1
Inventors:
MATSUMOTO KATSU
SONOKAWA SUSUMU
UESUGI TOSHIHARU
SONOKAWA SUSUMU
UESUGI TOSHIHARU
Application Number:
JP2016233774A
Publication Date:
June 14, 2018
Filing Date:
December 01, 2016
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
C30B29/06; C30B15/00; F27B14/16
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi