Title:
RECRYSTALLIZATION OF THIN FILM
Document Type and Number:
Japanese Patent JPS6395193
Kind Code:
A
Abstract:
PURPOSE:To prevent the formation of a cavity in a recrystallized film near a seed part and to improve the quality and yield of recrystallized thin film, by varying scanning rate or powder density of energy beam near the seed. CONSTITUTION:A 1st amorphous thin film formed on a substrate plate is scanned with an energy beam along a 2nd amorphous or polycrystalline thin film contacting with a single crystal domain under the 1st amorphous thin film through an opening formed on a part of the 1st amorphous thin film. The width of the energy beam is comparable to or smaller than the width of the opening. The 2nd thin film is melted and solidified by varying the scanning rate or power density of the energy beam scanning on or near the opening part. The solidification rate of the 2nd thin film near the seed can be made to be nearly equal to the rate at a region separated from the seed by using an energy beam having narrower width than the seed width and varying the scanning rate or power density of the beam near the seed part.
Inventors:
OKABAYASHI HIDEKAZU
SAITO SHUICHI
NAMITA HIROMITSU
SAITO SHUICHI
NAMITA HIROMITSU
Application Number:
JP24365186A
Publication Date:
April 26, 1988
Filing Date:
October 13, 1986
Export Citation:
Assignee:
NEC CORP
International Classes:
C30B13/06; C30B13/24; (IPC1-7): C30B13/06; C30B13/24
Attorney, Agent or Firm:
Uchihara Shin