Title:
RECTIFIER CIRCUIT, CONTROL METHOD FOR RECTIFIER CIRCUIT
Document Type and Number:
Japanese Patent JP2022125705
Kind Code:
A
Abstract:
To provide a rectifier circuit which is configured by connecting a plurality of MOSFETs in multiple stages, can perform interlocking control on the plurality of MOSFETs based on one detection voltage, and has low loss and high reliability.SOLUTION: A rectifier circuit includes a plurality of MOSFETs Q1 to Qn connected in multiple stages between a first terminal T1 and a second terminal T2, and a control circuit 1 for detecting a drain-source voltage of one or more MOSFETs out of the plurality of MOSFETs, comparing the drain-source voltage with a predetermined threshold voltage, and generating a control signal for controlling on/off of the plurality of MOSFETs. The control circuit performs interlocking control on the ON/OFF of the plurality of MOSFETs containing at least a target MOSFET based on a comparison result of a comparison circuit COMPa for comparing a detection voltage obtained by detecting the drain-source voltage of one MOSFET or the sum of the drain-source voltages of two or more MOSFETs out of the plurality of MOSFETs with a predetermined threshold voltage.SELECTED DRAWING: Figure 1
Inventors:
MIWA AKIHIRO
SHOJI HIROYUKI
SAKANO JUNICHI
UTSUMI TOMOYUKI
HIGUCHI TAKAHIRO
SHOJI HIROYUKI
SAKANO JUNICHI
UTSUMI TOMOYUKI
HIGUCHI TAKAHIRO
Application Number:
JP2021023448A
Publication Date:
August 29, 2022
Filing Date:
February 17, 2021
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD
International Classes:
H02M7/12; H01L21/329; H01L29/78
Attorney, Agent or Firm:
Polar Patent Attorney Corporation
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