Title:
整流ダイオード
Document Type and Number:
Japanese Patent JP2005512329
Kind Code:
A
Abstract:
A semiconductor diode has a low bandgap layer (10) and an intermediate region (4) with a plurality of field relief regions (6, 8) extending between the low bandgap layer (10) and a first region (2) of opposite conductivity type. The field relief regions deplete the intermediate region in the off state of the diode.
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Inventors:
Fang eddy
Application Number:
JP2003550293A
Publication Date:
April 28, 2005
Filing Date:
November 14, 2002
Export Citation:
Assignee:
Koninklijke Philips Electronics N.V.
International Classes:
H01L29/06; H01L29/40; H01L29/861; H01L29/868; (IPC1-7): H01L29/861
Attorney, Agent or Firm:
Susumu Tsugaru
Akihiko Miyazaki
Fueda Shusen
Akihiko Miyazaki
Fueda Shusen