Title:
DRY CLEANING METHOD
Document Type and Number:
Japanese Patent JP3211480
Kind Code:
B2
Abstract:
PURPOSE: To effectively icrease the cleaning speed of the inner wall surface of a plasma generating chamber, by setting the gas pressure in the plasma generating chamber at the time of cleaning, in a specified range.
CONSTITUTION: By setting the gas pressure of a plasma generating chamber at the time of cleaning in the range of 5×104-several Torr, a magnetic field is formed in an equipment with a main coil 4 and an auxiliary coil 11 or with only the main coil 4. Cleaning is performed while the location for eliminating reaction product is changed by combining the gas pressure in the above range with the magnetic field configuration or the magnetic field intensity. The mixing ratio of NF3 gas and N2 gas N2/NF3 at the time of introduction into the plasma generating chamber 5 is most preferably set to be 5-70%. It is desirable that high frequency power is applied to a substrate holder, and the substrate retaining temperature is increased at 150°C during cleaning.
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Inventors:
Mitsuo Sasaki
Application Number:
JP10576893A
Publication Date:
September 25, 2001
Filing Date:
May 07, 1993
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
C23C16/44; C23C16/50; C23C16/511; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23C16/511; H01L21/205
Domestic Patent References:
| JP4186833A | ||||
| JP4214873A | ||||
| JP2121330A | ||||
| JP63156533A | ||||
| JP56125840A |
Attorney, Agent or Firm:
Masaharu Shinobe
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