Title:
REDOX CAPACITOR
Document Type and Number:
Japanese Patent JP2015019098
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a redox capacitor usable at room temperature, and to provide a method of manufacturing the redox capacitor.SOLUTION: An amorphous semiconductor containing hydrogen is employed as an electrolyte of a redox capacitor. The amorphous semiconductor containing hydrogen includes a semiconductor element, such as amorphous silicon, amorphous silicon germanium, or amorphous germanium. The amorphous semiconductor containing hydrogen, includes an oxide semiconductor containing hydrogen. The oxide semiconductor containing hydrogen, includes a single-component oxide semiconductor, such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, or indium oxide. The oxide semiconductor containing hydrogen, includes a multi-component oxide semiconductor including InMO(ZnO)(where m>0, and M is one metallic element or two or more metallic elements, selected from Al, Ga, Fe, Ni, Mn, and Co).
Inventors:
KURIKI KAZUKI
OGINO KIYOFUMI
SAITO YUMIKO
SAKATA JUNICHIRO
OGINO KIYOFUMI
SAITO YUMIKO
SAKATA JUNICHIRO
Application Number:
JP2014182055A
Publication Date:
January 29, 2015
Filing Date:
September 08, 2014
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01G11/56; H01G9/00; H01G11/02; H01G11/46; H01G11/84; H01L21/822; H01L27/04
Domestic Patent References:
| JP2006501600A | 2006-01-12 | |||
| JPH01248667A | 1989-10-04 | |||
| JPH09260721A | 1997-10-03 | |||
| JP2008244460A | 2008-10-09 | |||
| JP2008262853A | 2008-10-30 |
Foreign References:
| WO2007105422A1 | 2007-09-20 | |||
| WO2004047122A1 | 2004-06-03 | |||
| US5392191A | 1995-02-21 |