Title:
REDUCED-PRESSURE VAPOR GROWTH METHOD
Document Type and Number:
Japanese Patent JPH03137094
Kind Code:
A
Abstract:
PURPOSE:To prevent particles from being floated at the time of the start of a reduced- pressure vapor growth stage and to obtain a good-quality grown layer by constituting the method so that the supply rate of carrier gas into a reaction chamber is increased while controlling this supply rate in a transfer period to the start of reduced-pressure vapor growth after inspection of airtightness of the reaction chamber is completed. CONSTITUTION:Before the start of reduced-pressure vapor growth, inspection of airtightness of a reaction chamber is performed in the conditions of high vacuum lower than the pressure at the time of vapor growth. Thereafter supply of carrier gas is performed in the main point described hereunder. In other words, the pressure in the reaction chamber 10 is gradually raised at the pressure of reduced pressure vapor growth by performing exhaust control(by a pressure regulation valve 19) while firstly supplying 22 carrier gas 11 of comparatively slight flow rate less than the flow rate necessary for reduced-pressure vapor growth into the reaction chamber 10. Then while the pressure in the reaction chamber 10 is held at the pressure of reduced-pressure vapor growth by the pressure regulation value 19, the flow rate of carrier gas 11 supplied to the reaction chamber 10 is gradually increased to the flow rate necessary for reduced-pressure vapor growth.
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Inventors:
KOBAYASHI TAKEHIKO
MIYANOMAE YOSHIHIRO
MIYANOMAE YOSHIHIRO
Application Number:
JP27342589A
Publication Date:
June 11, 1991
Filing Date:
October 20, 1989
Export Citation:
Assignee:
TOSHIBA MACHINE CO LTD
International Classes:
C30B25/14; H01L21/205; (IPC1-7): C30B25/14; H01L21/205