Title:
REDUCED PRESSURE VAPOR PHASE GROWING DEVICE
Document Type and Number:
Japanese Patent JPS5542231
Kind Code:
A
Abstract:
PURPOSE:To enable many semiconductor substrates to be treated to grow films of superior uniformity in a horizontal type vapor phase growing device by setting a plurality of reaction chambers connected to the same system in the device. CONSTITUTION:The horizontal type vapor phase growing device for growing semiconductor substrates by vapor phase reaction mainly consists of a plurality of horizontal type quartz reaction furnaces 1, 1', substrate mounting holders 14, and heaters 3. Silicon substrates 4, 4' are stood upright on quartz holders 14 in parallel with gas currents introduced from feed gas inlets 5, 6, 7, 8, and substrates 4, 4' are heated with heaters 3 to induce reduced press. vapor phase epitaxial growth while evacuating the device through exhaust port 9. Thus, epitaxial thin films of superior uniformity are obtd., and many semiconductor substrates can be treated.
Inventors:
TANNO YUKINOBU
Application Number:
JP11395078A
Publication Date:
March 25, 1980
Filing Date:
September 14, 1978
Export Citation:
Assignee:
CHO LSI GIJUTSU KENKYU KUMIAI
International Classes:
C30B25/08; C30B25/02; C30B25/12; H01L21/02; H01L21/205; (IPC1-7): C30B25/02; H01L21/02; H01L21/205