Title:
REDUCTION OF FACET REFLECTIVE POWER OF SEMICONDUCTOR LIGHT SOURCE AND DEVICE THEREFOR
Document Type and Number:
Japanese Patent JPH0330488
Kind Code:
A
Abstract:
PURPOSE: To reduce the effective facet reflection power by forming end cap regions made of a dielectric material of a refractive index nearly equal to the effective reflective index of a waveguide structure to minimize the reflection at the interface between main facets and corresponding end cap regions facing thereat. CONSTITUTION: At an input end 13 of an amplifier 16 a bulk (non-waveguiding) material is re-grown to form first end cap regions 10 on a facet 17 of the amplifier 16. At an output end 14 of the amplifier 16 the non-waveguiding material is re-grown to form a second end cap region 11 on a facet 18 of the amplifier 16. Both facets 17, 18 are used to act as boundaries between the ends of the amplifier and the re-grown end cap regions. The end cap regions are made of a material having a really higher band gap than that of the waveguide, and bulk material of these regions has a refractive index almost equal to the effective one of the waveguide.
Inventors:
UIRIAMU SHII RAIDAUTO
ERIOTSUTO AIKEN
ERIOTSUTO AIKEN
Application Number:
JP15417190A
Publication Date:
February 08, 1991
Filing Date:
June 14, 1990
Export Citation:
Assignee:
GTE LABORATORIES INC
International Classes:
H01L33/00; H01L33/10; H01S5/00; H01S5/50; H01S5/028; H01S5/16; (IPC1-7): H01L33/00; H01S3/18
Attorney, Agent or Firm:
Motohiro Kurauchi (1 outside)
Next Patent: JPH0330489