PURPOSE: To provide a reed frame material capable of wire bonding in the atmosphere and inexpensively being surface-treated.
CONSTITUTION: The reed frame material used for transistors or ICs or the like has a recrystallized structure 15 made by heat-treating a silver layer 11 provided on the uppermost surface of a base material 14 after coating or a rolling structure made by rolling the silver layer after coating and the reed frame material like this is obtained by heat-treating the silver applied ≥0.3μm on the surface of the base material 14 in an inert gas atmosphere or reducing atmosphere at a temp of ≥200°C and below the softening point of the base material for ≥5sec or by annealing the silver applied by ≥0.3μm on the surface of the base material in an inert gas atmosphere or reducing atmosphere at 400-800°C for ≥5sec before final rolling process.
ITO HISATOSHI
OGAWA YOSHIAKI
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