Title:
REFERENCE VOLTAGE SOURCE FOR MONOLITHIC INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPS57159056
Kind Code:
A
Abstract:
The invention discloses a monolithic integrated reference voltage source consisting of a source-drain series arrangement of a depletion-type n-channel MOSFET connected to the supply potential and of an enhancement-type n-channel MOSFET connected to a reference potential. The gate electrode of the depletion-type transistor is connected to the reference potential, while the reference voltage is taken off the point connecting the two transistors, to which point the gate electrode of the enhancement-type transistor is connected. When certain manufacturing requirements are observed as regards the gate oxide layer thickness, the substrate doping and the ratio r of the width-to-length ratio (W=width and L=length of the conducting channel), the circuit displays a very small temperature dependence of the reference voltage and a small surface requirement.
Inventors:
FURITSUTSU GIYUNTAA ADAMU
Application Number:
JP3410582A
Publication Date:
October 01, 1982
Filing Date:
March 05, 1982
Export Citation:
Assignee:
ITT
International Classes:
H01L21/822; G05F3/24; H01L21/8236; H01L27/04; H01L27/088; H01L29/78; (IPC1-7): H01L27/04; H01L27/08; H01L29/78