Title:
REFLECTION TYPE LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JP3753011
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a high outside radiation efficiency to increase the degree of freedom of designing a reflection mirror of a reflection type light emitting diode, even if the end of the mirror does not reach a light emitting surface of a light emitting element.
SOLUTION: The reflection type LEF has a light source 1 of a light emitting element 2 mounted on the bottom of a concave reflection mirror 3c and hence the mirror 3c reflects also lights horizontally emitted from a light emitting surface of the element 2 to converge the lights emitted from the element 2 within a specified range from an axis normal to the light emitting surface. This eliminates the need to approach the end of the mirror 3c facing the light source 1 up to the height of the light emitting surface of the element 2 and hence a high outside radiation efficiency can be obtained, if the mirror is distant from the element 2. Thus the degree of freedom of designing the reflection mirror is increased to deal with various applications.
Inventors:
Yoshinobu Suehiro
Application Number:
JP2001112456A
Publication Date:
March 08, 2006
Filing Date:
April 11, 2001
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
H01L33/54; H01L33/56; H01L33/60; H01L33/62; (IPC1-7): H01L33/00
Domestic Patent References:
| JP10308535A |
Foreign References:
| US5924785 |
Attorney, Agent or Firm:
Takenao Higuchi