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Patent Searching and Data


Title:
REFLECTION TYPE X-RAY MASK FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JPH0396220
Kind Code:
A
Abstract:

PURPOSE: To improve an exposure efficiency and to also improve mechanical strength of a mask by comparatively disposing a region indicating a relatively high reflectivity in a predetermined direction to an incident X-ray and a region indicating a low reflectivity on an incident X-ray incident surface in response to an original pattern.

CONSTITUTION: A region 12a indicating a relatively high reflectivity in a predetermined direction to an incident X-ray Ii and a region 13a indicating at least low reflectivity are comparatively disposed on an incident X-ray Ii incident surface 12 in response to an original pattern. In formation of the pattern is placed on the X-ray Ir in the predetermined direction, and a pattern responsive to the pattern is obtained on an object 14 placed in an optical path of the X-ray Ir. For example, a substance layer 13 of carbon or the like having X-ray absorptive power exhibiting low reflectivity to the X-ray Ii is disposed on the surface 12 of a molybdenum substrate 11 of a mirror-finished surface. In which king of comparison relation the regions 13a and 12a are disposed in a plane shape is determined in response to the pattern.


Inventors:
IWAMATSU SEIICHI
Application Number:
JP23332789A
Publication Date:
April 22, 1991
Filing Date:
September 08, 1989
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
G03F1/22; G03F1/24; G03F1/68; G03F1/80; H01L21/027; (IPC1-7): G03F1/08; G03F1/16; H01L21/027
Attorney, Agent or Firm:
Kisaburo Suzuki (1 outside)