Title:
REFLECTION TYPE PHOTOMASK BLANK, PRODUCTION METHOD OF REFLECTION TYPE PHOTOMASK, AND REFLECTION TYPE PHOTOMASK
Document Type and Number:
Japanese Patent JP2023156717
Kind Code:
A
Abstract:
SOLUTION: To provide a reflection type photomask blank including: a substrate; a multilayer reflection film for reflecting exposure light which is extreme ultraviolet region light; a protective film for protecting the multilayer reflection film; a light absorption film for absorbing the exposure light; and a hard mask film formed in contact with the light absorption film, where the hard mask is constituted by a multilayer including a first layer formed from a material containing silicon and containing no chromium, and disposed on the side most alienated from the substrate, and a second layer formed from a material containing chromium and containing no silicon.EFFECT: A resist pattern for forming a refined assist pattern can be made hard to collapse against impact in a development process of resist pattern formation, and an assist pattern with a line width of about 30 nm, particularly about 25 nm can be favorably formed by thinning the thickness of a resist film. Therefore, high resolution can be obtained in a transfer pattern of a reflection type photomask produced from a reflection type photomask blank.SELECTED DRAWING: Figure 1
Inventors:
SAKURAI KEISUKE
MIMURA SHOHEI
ISHII TAKESHI
MIMURA SHOHEI
ISHII TAKESHI
Application Number:
JP2022066238A
Publication Date:
October 25, 2023
Filing Date:
April 13, 2022
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F1/24; G03F1/80
Attorney, Agent or Firm:
Patent Attorney Corporation Eimei International Patent Office
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