Title:
単結晶成長炉の反射スクリーン及び単結晶成長炉
Document Type and Number:
Japanese Patent JP7025395
Kind Code:
B2
Abstract:
The present application provides a reflective screen of a monocrystal growth furnace and the monocrystal growth furnace. The reflective screen comprises an inner cylinder, an outer cylinder, a thermal insulating material sandwiched between the inner and the outer cylinders, and a thermal insulating pad disposed at the joint of the inner and the outer cylinders. The reflective screen and the monocrystal growth furnace are able to decrease the thermal transmittance from the outer cylinder to the inner cylinder, increase the vertical temperature gradient of the ingot, and prevent or decrease the silicon oxides evaporated from the molten silicon to condensate on the outer cylinder of the reflective screen. Thereby, polycrystalline caused by the oxides falling into the molten silicon can be reduced. Moreover, the thermal power required during the growth of monocrystalline silicon can be reduced because of the reduction of unnecessary thermal transmittance.
Inventors:
Shen Wan
Susumu
Gou Wang
Susumu
Gou Wang
Application Number:
JP2019191691A
Publication Date:
February 24, 2022
Filing Date:
October 21, 2019
Export Citation:
Assignee:
Shanghai Xinxing Semiconductor Technology Co., Ltd.
International Classes:
C30B15/00; C30B29/06
Domestic Patent References:
| JP2002538064A | ||||
| JP2004352581A | ||||
| JP2007191353A |
Foreign References:
| US20040055531 | ||||
| CN102352530A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki
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