To provide a cathode having excellent quantum efficiency, long term stability and durability, by forming a light-receiving part with diamond of a multi-crystal film having a specific film thickness.
A light-receiving part of this reflector type photocathode is formed with a diamond film of a polycrystal having a film thickness of 10 μm or less. The diamond film is formed so that 50% or more of the surface becomes a (100) face or a (111) face, with a film thickness of 20 μm or less, and formed on a substrate preferably so that the surface becomes a (100) face on a local part or on the whole surface by heteroepitaxial growth, with a film thickness of 20 μm or less, or formed so that the surface becomes a (111) face, with a film thickness of 10-40 μm. This reflector type photocathode 1 is manufactured by synthesizing a polycrystal diamond film 3 where boron is doped by a microwave CVD method, on a low-resistance silicon substrate 2 having conductivity.
YOKOTA YOSHIHIRO
HAYASHI KAZUYUKI
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