PURPOSE: To produce Ta powder, which is not contaminated with a getter metal and has an extremely reduced O2 content by heating the getter metal such as Ti, Zr having O2 affinity higher than that of Ta under hydrogen- containing atmosphere while bringing at Ta enclosure sealed with Ta foil into contact with powdery Ta.

CONSTITUTION: A Ta enclosure is formed by enclosing and sealing Ti, Zr, Ca, Ce, Hf, La, Li, Pr, Sc, Th, U, V, Y and their mixtures having large affinity for O2, in particular, a powder, a cut chip, etc., of a getter metal of Ti, Zr, etc., in a box made of a very thin Ta flake of 0.0002-0.001in thickness. The enclosure is physically made in contact with Ta powder, and heated to about 900-2400°C in an atmosphere containing hydrogen. The Ta enclosure behaves a unidirectional conducting body in this case, O2 containing Ta powder is conbined with the getter metal through the Ta flake of the Ta enclosure, the O2 content in the Ta powder is significantly lowered, the vopor of the getter metal does not pass the Ta flake of the Ta enclosure, and Ta powder not conteining oxygen and not contaminated with a getter metal of Ti, etc., is obtained.