Title:
RELEASING LIQUID COMPOSITION FOR RESIST
Document Type and Number:
Japanese Patent JP3255623
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To peel a film altered by an ion implantation process at a low temperature (room temperature) in a short time and to prevent a metal thin film on a substrate and a peripheral device from being corroded by containing the salt of hydrofluoric acid and a base containing no metal, hydrofluoric acid, a water-soluble organic solvent and water, and setting the hydrogen ion concentration to a specific range.
SOLUTION: This releasing liquid composition for a resist contains the salt of hydrofluoric acid and a base containing no metal, hydrofluoric acid, a water- soluble organic solvent, water and an anticorrosive as required, and its hydrogen ion concentration (PH) is set to the range of 5-8. The salt component may be adjusted at nearly neutral to attain this hydrogen ion concentration PH value range, and the hydrofluoric acid can be blended within the range to keep the PH value. Even a resist film altered in the severe processing condition can be peeled at the room temperature in a short time, and a substrate made of an easily corroded Al and a peripheral device are not corroded.
Inventors:
Masato Tanabe
Kazumasa Wakiya
Masakazu Kobayashi
Toshimasa Nakayama
Kazumasa Wakiya
Masakazu Kobayashi
Toshimasa Nakayama
Application Number:
JP17081099A
Publication Date:
February 12, 2002
Filing Date:
June 21, 1996
Export Citation:
Assignee:
Tokyo Ohka Kogyo Co., Ltd.
International Classes:
H01L21/027; C09D9/00; C11D7/10; C11D7/26; C11D7/32; C11D7/50; G03F7/42; (IPC1-7): G03F7/42; C09D9/00; C11D7/10; C11D7/26; C11D7/32; C11D7/50; H01L21/027
Domestic Patent References:
| JP9197681A | ||||
| JP8202052A |
Attorney, Agent or Firm:
Heihachi Hattori