REMOVAL OF GASEOUS SILICON COMPOUND, AND REMOVING AGENT AND ITS PREP ARATION

Title:

REMOVAL OF GASEOUS SILICON COMPOUND, AND REMOVING AGENT AND ITS PREP ARATION

Document Type and Number:

Japanese Patent JPH06269631

Kind Code:

A

Abstract:

PURPOSE: To improve the repeatability of a removal capability of a gaseous silicon compound using aluminum oxide to a maximum possible extent by allowing vapor to come in contact with aluminum oxide under specific temperature conditions, and then gas containing a gaseous silicon compound to come in contact with the aluminum oxide.

CONSTITUTION: Aluminum oxide which is in a state that a physically adsorbed water is not present, is allowed to come in contact with vapor under 100 to 200°C temperature conditions. Then the aluminum oxide is activated, and the capability of removing the gaseous silicon compound is maximized. Consequently, if gas containing the gaseous silicon compound is allowed to come in contact with the activated aluminum oxide, the silicon oxide in the gas is adsorbed onto the surface of the aluminum oxide and removed.

Inventors:

IMAI HIROAKI
IKEDA TAKUYA
TOMIMOTO AKIO

Application Number:

JP5665493A

Publication Date:

September 27, 1994

Filing Date:

March 17, 1993

Export Citation:

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Assignee:

NIPPON OXYGEN CO LTD

International Classes:

B01D53/46; B01D53/02; B01D53/14; B01D53/34; B01D53/86; B01J20/08; H01L21/205; (IPC1-7): B01D53/34; B01D53/02; B01D53/14; B01D53/34; B01D53/36; B01J20/08; H01L21/205

Attorney, Agent or Firm:

Kazuhiko Kido (1 person outside)

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