PURPOSE: To remove a protective film and a protective tape without a complicated process to strip the protective film mechanically and without the use of a harmful solvent such as trichlene or the like by a method wherein the protective film and the protective tape are composed of a material capable of being processed by a plasma ashing method and the protective film and the protective tape are removed by the plasma ashing method.
CONSTITUTION: A protective film 2 capable of being processed by a plasma ashing method is coated on a semiconductor substrate 1 where a passivating film is formed. Then, a protective tape 3 capable of being processed by the plasma ashing method is glued to this protective film 2. Then, the substrate 1 is placed on a fixed stand of a reverse-face grinder and is then fixed. The reverse face of the substrate 1 is ground by means of a grindstone. After completion of this process, the protective film 2 and the protective tape 3 are ashed by the plasma ashing method and are removed. Because the protective film and the protective tape are removed by one effort in this way, it is not necessary to use a process where the protective tape is stripped mechanically by using a tape-stripping machine and the protective film is removed by trichlene.
ARAI HAJIME
OBATA MASANORI
TAKAGI HIROSHI
KUROKI HIDEFUMI
IKEGAMI MASAAKI
