REMOVING METHOD FOR DRY ETCHING RESIDUES

Title:

REMOVING METHOD FOR DRY ETCHING RESIDUES

Document Type and Number:

Japanese Patent JPH11204491

Kind Code:

A

Abstract:

To remove etching polymers effectively by removing dry etching residues using an isopropyl alcohol-containing vapor after a dry etching process using a patterned photoresist has been performed.

A polysilicon 10 is formed on a silicon wafer 2 on which a thermally oxidized film 3 has been formed, and a photoresist 6 is coated to the wafer 2. Then, the photoresist 6 is patterned, and the polysilicon 10 is subjected to a dry etching process using an ICP dry etching system. The etching gas used is HBr. Then, the wafer 2, from which the photoresist 6 that is no longer needed has been removed by effecting sulfuric acid-hydrogen peroxide cleaning, is subjected to an isopropyl alcohol vapor process as a sample using vapor processing equipment for, e.g. 10 minutes, thereby removing etching polymers 8.

Inventors:

SETO HIDEAKI
YAMAMOTO HARUHIKO
SATO NOBUYOSHI
SAITO KYOKO

Application Number:

JP41198A

Publication Date:

July 30, 1999

Filing Date:

January 05, 1998

Export Citation:

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Assignee:

LSI LOGIC CORP

International Classes:

C23F4/00; H01L21/302; H01L21/304; H01L21/306; H01L21/3065; (IPC1-7): H01L21/306; H01L21/304; H01L21/3065

Attorney, Agent or Firm:

Kazuo Shamoto (5 outside)

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