Title:
REPAIRING METHOD AND DEVICE FOR SURFACE DEFECT OF SINGLE CRYSTAL WAFER
Document Type and Number:
Japanese Patent JP2008147639
Kind Code:
A
Abstract:
To provide a method and a device for repairing an affected layer caused by machining work so as to have a crystal structure just the same as a substrate part without removing a material of a surface of a single crystal wafer.
In the method for repairing a surface defect which is an affected layer of the surface of a single crystal wafer used for a semiconductor, a MEMS and an optical lens, etc., the surface of the single crystal is irradiated with a pulse laser one time.
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Inventors:
EN KIO
KURIYAGAWA TSUNEMOTO
KURIYAGAWA TSUNEMOTO
Application Number:
JP2007294174A
Publication Date:
June 26, 2008
Filing Date:
November 13, 2007
Export Citation:
Assignee:
UNIV TOHOKU
International Classes:
H01L21/268; B23K26/00; H01L21/304
Attorney, Agent or Firm:
Atsushi Suda
Shuji Kusunoki
Shuji Kusunoki