RESIN COMPOSITION FOR SACRIFICIAL LAYER AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

Japanese Patent JP2016004929

A

PROBLEM TO BE SOLVED: To provide a material for a sacrificial layer which has heat resistance required for a semiconductor device manufacturing process and the like, and which can decrease decomposition temperature of a resin by a gentle treatment such as ultraviolet irradiation, a helium plasma treatment and a hydrogen plasma treatment, and which allows a high-performance semiconductor device to be easily manufactured.SOLUTION: A resin composition for a sacrificial layer contains: (a) a resin having a structural unit including an alicyclic structure and/or a fluoroalkyl group of at least 50 mol% and over; and (b) a solvent.

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TOMIKAWA MASAO

JP2014124936A

January 12, 2016

June 18, 2014

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TORAY INDUSTRIES

H01L21/312; B81C99/00; C08G63/00; C08G65/00; C08G69/00; C08G73/08; C08G73/10; C08G85/00

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