Resin and lower layer film formation material for lithography which have full Oren structure

Japanese Patent JP6094947

B2

There are provided a novel resin having a fluorene structure which has a relatively high carbon concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process, and a method for producing the resin, as well as a material for forming an underlayer film useful for forming a novel resist underlayer film excellent in heat resistance and etching resistance as an underlayer film for multilayer resist, and a pattern forming method using the material. The resin of the present invention has a structure represented by the following general formula (1). (in the general formula (1), each of R 3 and R 4 independently denotes a benzene ring or a naphthalene ring, a carbon atom at the bridgehead of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom of each of other aromatic rings, and a carbon atom of each of aromatic rings of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom at the bridgehead of other fluorene backbone or (di)benzofluorene backbone.)

Touhara Go
Naoya Uchiyama
Echigo Masatoshi

JP2013536113A

March 15, 2017

September 04, 2012

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Mitsubishi Gas Chemical Co., Ltd.

C08G61/10; C08G8/02; C08G10/00; C08G14/00; C08G85/00; C08L61/00; C08L65/00; C08L87/00; G03F7/11; G03F7/26; H01L21/027

JP2010122656A
JP2010100770A
JP2010271654A
JP2011085927A

Yoshiyuki Inaba
Toshifumi Onuki
Kazuhiko Naito

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