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Title:
RESIN FOR OPTICAL SEMICONDUCTOR ELEMENT ENCAPSULATION CONTAINING POLYBOROSILOXANE
Document Type and Number:
Japanese Patent JP2009019104
Kind Code:
A
Abstract:

To provide a resin for optical semiconductor element encapsulation containing a polyborosiloxane, which is excellent in all of heat resistance, transparency and light resistance, and to provide an optical semiconductor device encapsulated with the resin for optical semiconductor element encapsulation containing the polyborosiloxane.

The present invention discloses: a resin for optical semiconductor element encapsulation containing the polyborosiloxane obtained by reacting a silicon compound with a boron compound; and a light emitting diode device having an optical semiconductor element encapsulated with the resin for optical semiconductor element encapsulation containing the polyborosiloxane.


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Inventors:
KATAYAMA HIROYUKI
AKAZAWA MITSUHARU
Application Number:
JP2007182486A
Publication Date:
January 29, 2009
Filing Date:
July 11, 2007
Export Citation:
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Assignee:
NITTO DENKO CORP
International Classes:
C08G77/56; C08G79/08; H01L33/56
Domestic Patent References:
JPH05139714A1993-06-08
JPS54138524A1979-10-27
JPS53147798A1978-12-22
JP2002179794A2002-06-26
JP2008231403A2008-10-02
JP2004292779A2004-10-21
JPH04125929A1992-04-27
JPH10152561A1998-06-09
JPS5483100A1979-07-02
JP2009545649A2009-12-24
Attorney, Agent or Firm:
Yoshinori Hosoda



 
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